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  • Theoretical study of M–H (M=Ti, V, Zr or Nb) structure phase diagram at high pressures
    文章来源:Int. J. Hydrogen Energ. 44, 13592 (2019) 作者:Xueyu Zhao, Xiaobao Yang, Liuzhang Ouyang, Yujun Z
  • Full visible spectra emission introduced by crystal-site engineering in β-Ca3(PO4)2-type solid solution phosphors for high quality white light emitting diodes application
    文章来源:Chem. Eng. J. 375, 121976 (2019) 作者:Shiqi Liu, Yujun Liang, Yingli Zhu, Haoran Li, Yin
  • Interface structure prediction via CALYPSO method
    文章来源:Sci. Bull. 64, 301(2019) 作者:Bo Gao, Pengyue Gao, Shaohua Lu, Jian Lv, Yanchao
  • Probing the structure and electronic properties of beryllium doped boron clusters: A planar BeB16− cluster motif for metallo-borophene
    文章来源:Sci. Rep. 9, 14367 (2019) 作者:Dongliang Kang, Weiguo Sun, Hongxiao Shi, Cheng Lu
  • Generation of molybdenum hydride species via addition of molecular hydrogen across metal-oxygen bond at monolayer oxide/metal composite interface
    文章来源:Int. J. Hydrogen Energ. 45, 2975 (2019) 作者:Zhenjun Song, Xiji Shao, Qiang Wang, Chunxin Ma, K
  • Three metallic BN polymorphs: 1D multi-threaded conduction in 3D network
    文章来源:Phys. Chem. Chem. Phys. 22, 489 (2019) 作者:Mei Xiong, Zhibin Gao, Kun Luo, Feifei Ling, Yufei
  • Metallization and superconductivity in methane doped by beryllium at low pressure
    文章来源:Phys. Chem. Chem. Phys. (2019) 作者:Haiyan Lv, Siyuan Zhang, Menghu Li, Yulong Hai, Ni
  • Phase transition and electronic properties of Skutterudite-type IrP3 at high pressure
    文章来源:Phys. Chem. Chem. Phys. 21, 21262 (2019) 作者:Xuejiao Ma, Dan Zhou, Yan Yan, Jing Xu, Siyuan Liu
  • Evidence of the O–Pd–O and Pd–O4 structure units as oxide seeds and their origin on Pd(211): revealing the mechanism of surface oxide formation
    文章来源:Phys. Chem. Chem. Phys. 21, 6499 (2019) 作者:Xiran Cheng , Ziyun Wang , Yu Mao and P. Hu
  • Perfect Planar Tetra-Coordinated MC6 Monolayer: Superior Anode Material for Li-ion Battery
    文章来源:Phys. Chem. Chem. Phys. 21, 15187 (2019) 作者:Shaohua Lu, Chuncheng Yang, Dong Fan and X. J. Hu
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